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Spectroscopic ellipsometry characterization: silicon-based solar cells

29 September 2008 | Featured Articles > Thin Film

James N. Hilfiker & Ron A. Synowicki, J.A. Woollam Co., Inc.

ABSTRACT

Research and production of state-of-the-art solar cells requires accurate thin-film measurements.  Spectroscopic ellipsometry (SE) provides non-destructive characterization by detecting changes in polarization when light reflects from a layered structure (Figure 1).  Measurements can be applied to all types of thin films: dielectrics, semiconductors, thin metals and organics.  For most, SE is used to determine film thickness and optical constants from the interaction between probe beam and the thin films.  Many additional properties can be determined from the changes they produce on optical constants – including composition, crystallinity, porosity, conductivity, surface roughness, and more.

Spectroscopic ellipsometry characterization: silicon-based solar cells

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