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Research institute IMEC vzw has said it is developing a method to produce 50 micron thick crystalline silicon wafers for use in solar cells.
The process involves mechanically initiating and propagating a crack parallel to the surface of a silicon wafer and as such is does not involve any kerf losses. In this way, silicon foils with an area of 25 square centimeters and a thickness of 30 to 50 microns have been produced. The method makes use of industrially available tools such as a screen printer and a belt furnace.
Adding an ultra-thin wafer or foil of active silicon on top of a low-cost substrate could reduce the amount of high-grade silicon used in solar cells, IMEC said.
IMEC is pursuing a number of different ways to produce such foils of crystalline silicon at an acceptable cost. One of the promising methods is a lift-off process that only requires the use of a screen printer and a belt furnace; no ion-implanted or porous layer is needed.
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