Verified by the U.S. Department of Energy's National Renewable Energy Laboratory (NREL), Spire Semiconductor, a wholly owned subsidiary of Spire Corp., has fabricated the most efficient triple-junction, gallium arsenide (GaAs) cell, with an efficiency of 42.3% at 406 suns AM1.5D, 25C (42.2% at 500 suns). The 0.97cm2 cell was developed as part of a NREL incubator subcontract.
“In less than 18 months, we were able to validate and incorporate our new concept into a production-ready cell design with world-record efficiency,” noted Edward D. Gagnon, GM of Spire Semiconductor. “This is a remarkable achievement by our technical team. NREL has been extremely helpful during the entire program, with timely responses to our confirmation requests for accurate efficiency measurements. Their continued support enabled us to validate our new bifacial cell architecture. This higher efficiency, next-generation GaAs CPV cell platform is now available commercially to the concentrator systems providers.”
The NREL incubator subcontract reached 39% efficiencies in the first phase.