GCL-Poly has successfully developed a high efficiency multicrystalline wafer ‘GCL Multi-Wafer S1+,’ which is said to have achieved customer feedback, after trial runs of average conversion efficiencies of 17.6%, with an increase of 0.5-0.7% when compared with its current benchmark wafers.
Improvements in quality and purity of bare silicon wafers has a direct impact on cell/module efficiencies. Although monocrystalline wafers offer such improvements over multicrystalline wafers, extra cost of production limits adoption. Higher quality multicrystalline wafers at close to current production costs are required to boost conversion efficiencies and lower the cost per watt.
The new wafer is made from electronic grade polysilicon materials produced by GCL-Poly under the most stringent quality control in the industry and was based on innovative developments from the theory of silicon material and a new design of thermal field coupled to precise process development. The GCL Multi-Wafer S1+ has improved microstructure and precisely controlled crystal defects such as dislocations, stacking faults and grain boundaries. As a result the wafer has the characteristics of a low concentration of carbon, oxygen and metal impurity and also high minority carrier lifetime as well as uniform doping profile.
High efficiency multicrystalline wafer (156 x 156mm)
GCL-Poly expects that the output of the GCL Multi-Wafer modules (60 units, 156 x 156mm) and GCL Quasi-Mono Wafer modules (60 units, 156 x 156mm) will reach 270W and 285W respectively.
March 2012 onwards.