In a presentation at the 37th IEEE Photovoltaic Specialist Conference (PVSC) in Seattle, Dr. Roger E. Welser, Chief Technical Officer at Magnolia Solar detailed new record high voltages for InGaAs quantum well solar cells, the company said in a statement without revealing the voltage figures.
“Quantum structured solar cells seek to harness a wide spectrum of photons at high voltages in a single-junction device by embedding low energy-gap wells within a high energy-gap matrix,” commented Dr. Ashok K. Sood, President and CEO of Magnolia Solar. “Quantum well solar cells have the potential to deliver ultra-high power conversion efficiencies in single junction devices; efficiencies that in theory can approach 45% in un-concentrated sunlight over a wide range of environmental conditions.”
Magnolia Solar said that it is working to enhance the open circuit voltage of InGaAs quantum well solar cell structures by employing a patent-pending device structure.
“Historically, the challenge for quantum structured solar cells has been to incorporate low energy-gap material without severely degrading the operating voltage of the photovoltaic device,” noted Dr. Welser. “In this work, we demonstrate record high open circuit voltages by employing a novel III-V material structure with an extended wide band gap emitter heterojunction. These results will enable quantum well solar cells to begin achieving their promised levels of performance. Nanostructured devices provide a means to decouple the usual dependence of short circuit current on open circuit voltage that limits conventional solar cell design.”