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The Solar Energy Research Institute of Singapore (SERIS) has ordered an ALD process tool from SoLayTec that will see the former utilize the process at several global research institutes. SERIS has also entered into a three-year research agreement with metalorganics material supplier AkzoNobel and SoLayTec to study the viability of the integration of Al2O3 into new cell concepts. The contract also extends SoLayTec’s reach into Asian markets.

“As a pioneer in the application of atomic layer deposition (ALD) for high-efficiency silicon wafer solar cells, I am very happy to work with SoLayTec to bring ALD to the next level,” commented Dr. Bram Hoex, Director of SERIS at the National University of Singapore. “The crystalline silicon surface passivation by ALD-grown aluminium oxide films has enabled very high solar cell efficiencies on lab-scale reactors, and we are very excited to see that companies are now bringing ALD from laboratory scale to mass production scale.

“The spatial ALD approach developed by SoLayTec offers ALD at unprecedented deposition rates (up to 1.0 nm/s) on a single side of a silicon substrate, without sacrificing any of the unique properties of ALD,” he continued. “We are confident that our collaboration with SoLayTec will lead to very high efficiencies for large-area silicon wafer solar cells, for several solar cell designs under development at SERIS.”

SoLayTec is also undertaking the design and test phase of its High Volume Tool (HVT), scheduled for launch later this year. This tool is said to have a highly scalable throughput and claims to be equipped with the highest flexibility in terms of uptime and layer thickness and a low cost of ownership for Al2O3.

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