Spire Semiconductor, a subsidiary of Spire Corporation, is to offer a
contract design and manufacturing service to manufacturers of solar
concentrator cells at its 50,000 square foot facility in Hudson, New
Hampshire. Under its ‘Captive Custom Capacity’ initiative, Spire
Semiconductor will leverage its production experience in gallium
arsenide (GaAs) solar cells, wafer epitaxy and other thin film products
and has an expandable capacity of 50MW per annum.
“We want manufacturers and system integrators to know that they have a
strong partner in Spire Semiconductor,” said Roger G. Little, Spire’s
Chairman and Chief Executive Officer. “That’s why we developed this
Captive Custom Capacity initiative that leverages our decades of
experience and state-of-the-art facilities. We now can offer our
partners the benefits of an optimized design and manufacturing process
with the potential for large-scale contract production based on their
individual needs.”
“Our extensive MOCVD experience and
capabilities enable us to grow a wide variety of GaAs and InP epitaxial
structures,” said Edward D. Gagnon, General Manager of Spire
Semiconductor. “Throughout our history, we’ve recognized that
time-to-market is critical to our customers’ success and with this new
initiative, we have committed to providing the fastest turnaround times
possible. With decades of experience in the field, our epitaxy
engineers work closely with customers to assure that every wafer meets
their expectations.”
Spire Semiconductor will offer prototype
development to full production that also includes photolithographic
processing of III-V cell structures and deposition of broadband,
dual-layer AR coatings.
