Cell modifications for preventing potential-induced degradation in c-Si PV systems

In recent years, potential-induced degradation (PID) has been recognized as a serious reliability issue for large PV systems, potentially causing efficiency losses of more than 90%, and even failures [1–4]. Such large decreases in efficiency may require the modules in the system to be replaced after just a few years’ operation. This has motivated a substantial research effort in the PV community, leading to a better understanding of the phenomenon, as well as to a range of mitigation strategies. A recent publication by Luo et al. gives a comprehensive overview of this research [5].
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