Imec’s large-area n-PERT cells: Raising the efficiency beyond 22% by selective laser doping


By Monica Aleman, IMEC; Angel Uruena, Silicon PV Research Scientist, IMEC; Emanuele Cornagliotti, Researcher, IMEC; Aashish Sharma, IMEC; Richard Russell, IMEC; Filip Duerinckx, IMEC; Jozef Szlufcik, Director of the Photovoltaics Department, IMEC

This paper presents the main features of imec’s n-PERT (passivated emitter rear totally diffused) cells, which have achieved independently confirmed efficiencies of 22%. A special focus is given to the selective front-surface field formation by laser doping, which – combined with imec’s front-plating sequence and the excellent rear-surface passivation by Al2O3 on the boron-diffused emitters – has enabled very high voltages (close to 685mV) to be realized on large-area n-type Cz material.

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Now that the PV industry has unquestionably entered a new growth phase, all eyes are on which technologies will win through into the mainstream of PV manufacturing. PERC, n-type, p-type bifacial, heterojunction – all have become familiar terms in the ever-growing constellation of solar cell technologies. The question is which will offer manufacturers what they are looking for in improving efficiencies and cutting costs.

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