Premium

Progression of n-type base crystalline silicon solar cells

May 1, 2011
Facebook
Twitter
LinkedIn
Reddit
Email

By L.J (Bart) Geerligs, Researcher, ECN Solar Energy; Nicolas Guillevin, Researcher, Device Architecture and Integration Group, ECN Solar Energy; Ingrid G. Romijn, Researcher, ECN Solar Energy

This paper reviews the status of solar cell technology based on n-type crystalline silicon wafers. It aims to explain the reasons behind the strong and increasing attention for n-type cells, including the inherent advantages of n-type base doping for high diffusion length, and for the industrialization of designs with good rear-side electronic and optical properties. The focus will be on cells using diffused junctions.

Published In

Premium
The 12th Edition was published in May 2011. Highlights from this edition include Conergy’s in-depth study of MES in PV facilities; University of Konstanz heralds the return of UMG-Si; RWTH Aachen University details the gettering options available for selective emitters; TU Delft presents an overview of breakage issues for silicon wafers and cells; and the University of Toledo outlines the benefits of RTSE in polarized light metroscopy.

Read Next

Upcoming Events

Upcoming Webinars
December 17, 2025
2pm GMT / 3pm CET
Solar Media Events
February 3, 2026
London, UK
Solar Media Events
March 24, 2026
Dallas, Texas
Solar Media Events
April 15, 2026
Milan, Italy
Solar Media Events
June 16, 2026
Napa, USA