Manz Automation’s OneStep selective emitter system boosts cell efficiencies 0.5%

September 6, 2010
Facebook
Twitter
LinkedIn
Reddit
Email

Product Briefing Outline: Manz Automation has developed the OneStep selective emitter (SE) system for crystalline silicon solar cells. Among competing SE processes, the laser process consists of only one single process step, without any consumable usage. Investment payback is said to be less than one year, while the small footprint allows easy retrofit of existing production lines. The tool is claimed to enable cell efficiency gains of up to 0.5%. 

Problem: One of the most prominent goals in the production of crystalline silicon solar cells is the reduction of the specific production cost per watt. One means of raising efficiencies is the incorporation of a selective emitter cell structure into industrial solar cell production, as it can increase solar cell efficiency due to enhanced blue light response, leading to higher short circuit current Jsc, and a reduced emitter saturation current density Joe, boosting the open circuit voltage Voc.

This article requires Premium SubscriptionBasic (FREE) Subscription

Try Premium for just $1

  • Full premium access for the first month at only $1
  • Converts to an annual rate after 30 days unless cancelled
  • Cancel anytime during the trial period

Premium Benefits

  • Expert industry analysis and interviews
  • Digital access to PV Tech Power journal
  • Exclusive event discounts

Or get the full Premium subscription right away

Or continue reading this article for free

Solution: The OneStep system features one single additional process step, when compared with standard crystalline silicon solar cell production. This step is introduced between emitter diffusion and phosphorous glass (PSG) etch. Pulsed laser irradiation locally scans the wafer surface, forming highly-doped areas by local liquid-state diffusion of phosphorous from the PSG layer. After anti-reflection coating, the metallization grid is deposited on top of the highly doped areas. The local doping leads to a reduction of the specific contact resistance from silicon to metal, thus allowing for the use of lowly doped emitters with high sheet resistance.

Applications: c-Si production applying n-type emitters and front-side metallization as well as existing lines (retrofit).

Platform: Throughput: 1200 or 2400 wafers per hour (configurable); accuracy: ±10µm.

Footprint (including automation): 4.7 x 2.7m2. Fully automated and compatible with all established carriers. Efficiency gain up to 0.5% absolute.

Availability: Currently available.

Read Next

October 29, 2025
The European Bank for Reconstruction and Development (EBRD) has provided US$142 million in financing for the construction of a 1GW solar and 1.3GWh BESS portfolio in Uzbekistan.
Premium
October 29, 2025
Damage to solar from so-called Natural Catastrophe events is increasing as the technology expands its reach and weather conditions worsen.
October 29, 2025
Greenvolt and European Energy have finalised financial deals for solar-plus-storage projects in Denmark and Latvia.
October 29, 2025
NextEra Energy Resources added 3GW of new renewable energy generation and storage capacity to its portfolio in the third quarter of 2025.
October 29, 2025
French firms TotalEnergies and EDF, with local partners, secured contracts for 400MW and 600MW solar projects in Saudi Arabia, supporting Vision 2030 renewable goals.
October 29, 2025
US solar manufacturer Corning has brought online its wafer production at its Michigan plant, during the third quarter of 2025.

Subscribe to Newsletter

Upcoming Events

Upcoming Webinars
November 12, 2025
10am PST / 1pm EST
Solar Media Events
November 25, 2025
Warsaw, Poland
Solar Media Events
December 2, 2025
Málaga, Spain
Solar Media Events
February 3, 2026
London, UK
Solar Media Events
March 10, 2026
Frankfurt, Germany