Manz Automation’s OneStep selective emitter system boosts cell efficiencies 0.5%

September 6, 2010
Facebook
Twitter
LinkedIn
Reddit
Email

Product Briefing Outline: Manz Automation has developed the OneStep selective emitter (SE) system for crystalline silicon solar cells. Among competing SE processes, the laser process consists of only one single process step, without any consumable usage. Investment payback is said to be less than one year, while the small footprint allows easy retrofit of existing production lines. The tool is claimed to enable cell efficiency gains of up to 0.5%. 

Problem: One of the most prominent goals in the production of crystalline silicon solar cells is the reduction of the specific production cost per watt. One means of raising efficiencies is the incorporation of a selective emitter cell structure into industrial solar cell production, as it can increase solar cell efficiency due to enhanced blue light response, leading to higher short circuit current Jsc, and a reduced emitter saturation current density Joe, boosting the open circuit voltage Voc.

This article requires Premium SubscriptionBasic (FREE) Subscription

Try Premium for just $1

  • Full premium access for the first month at only $1
  • Converts to an annual rate after 30 days unless cancelled
  • Cancel anytime during the trial period

Premium Benefits

  • Expert industry analysis and interviews
  • Digital access to PV Tech Power journal
  • Exclusive event discounts

Or get the full Premium subscription right away

Or continue reading this article for free

Solution: The OneStep system features one single additional process step, when compared with standard crystalline silicon solar cell production. This step is introduced between emitter diffusion and phosphorous glass (PSG) etch. Pulsed laser irradiation locally scans the wafer surface, forming highly-doped areas by local liquid-state diffusion of phosphorous from the PSG layer. After anti-reflection coating, the metallization grid is deposited on top of the highly doped areas. The local doping leads to a reduction of the specific contact resistance from silicon to metal, thus allowing for the use of lowly doped emitters with high sheet resistance.

Applications: c-Si production applying n-type emitters and front-side metallization as well as existing lines (retrofit).

Platform: Throughput: 1200 or 2400 wafers per hour (configurable); accuracy: ±10µm.

Footprint (including automation): 4.7 x 2.7m2. Fully automated and compatible with all established carriers. Efficiency gain up to 0.5% absolute.

Availability: Currently available.

Read Next

April 15, 2026
Iberdrola is set to acquire a 42MW solar PV plant in Lazio, Italy, taking its total installed renewable capacity in the country to 400MW.
April 15, 2026
Virginia governor Abigail Spanberger has signed four bills into law that will add 625MW of new community solar capacity by 2028.
Premium
April 15, 2026
Italy’s solar sector is an attractive investment space, and much of this is owed to the supportive auction systems managed by the government.
April 15, 2026
Rumours of a closed-door meeting in China to discuss polysilicon production cuts sent the share prices of several leading players higher before they were widely denied.
April 15, 2026
European renewables developers need to embrace volatility and change in the face of ongoing global shifts, according to speakers at the SolarPLUS Europe conference in Milan, Italy this morning.
April 15, 2026
Jupiter International and Ampin Energy Transition have commissioned a 1.3GW integrated solar cell and module manufacturing facility in Bhubaneswar, Odisha.

Upcoming Events

Solar Media Events
June 16, 2026
Napa, USA
Solar Media Events
October 13, 2026
San Francisco Bay Area, USA
Solar Media Events
November 3, 2026
Málaga, Spain
Solar Media Events
November 24, 2026
Warsaw, Poland
Solar Media Events
March 9, 2027
Location To Be Confirmed