Manz Automation’s OneStep selective emitter system boosts cell efficiencies 0.5%

Facebook
Twitter
LinkedIn
Reddit
Email

Product Briefing Outline: Manz Automation has developed the OneStep selective emitter (SE) system for crystalline silicon solar cells. Among competing SE processes, the laser process consists of only one single process step, without any consumable usage. Investment payback is said to be less than one year, while the small footprint allows easy retrofit of existing production lines. The tool is claimed to enable cell efficiency gains of up to 0.5%. 

Problem: One of the most prominent goals in the production of crystalline silicon solar cells is the reduction of the specific production cost per watt. One means of raising efficiencies is the incorporation of a selective emitter cell structure into industrial solar cell production, as it can increase solar cell efficiency due to enhanced blue light response, leading to higher short circuit current Jsc, and a reduced emitter saturation current density Joe, boosting the open circuit voltage Voc.

This article requires Premium SubscriptionBasic (FREE) Subscription

Unlock unlimited access for 12 whole months of distinctive global analysis

Photovoltaics International is now included.

  • Regular insight and analysis of the industry’s biggest developments
  • In-depth interviews with the industry’s leading figures
  • Unlimited digital access to the PV Tech Power journal catalogue
  • Unlimited digital access to the Photovoltaics International journal catalogue
  • Access to more than 1,000 technical papers
  • Discounts on Solar Media’s portfolio of events, in-person and virtual

Or continue reading this article for free

Solution: The OneStep system features one single additional process step, when compared with standard crystalline silicon solar cell production. This step is introduced between emitter diffusion and phosphorous glass (PSG) etch. Pulsed laser irradiation locally scans the wafer surface, forming highly-doped areas by local liquid-state diffusion of phosphorous from the PSG layer. After anti-reflection coating, the metallization grid is deposited on top of the highly doped areas. The local doping leads to a reduction of the specific contact resistance from silicon to metal, thus allowing for the use of lowly doped emitters with high sheet resistance.

Applications: c-Si production applying n-type emitters and front-side metallization as well as existing lines (retrofit).

Platform: Throughput: 1200 or 2400 wafers per hour (configurable); accuracy: ±10µm.

Footprint (including automation): 4.7 x 2.7m2. Fully automated and compatible with all established carriers. Efficiency gain up to 0.5% absolute.

Availability: Currently available.

Read Next

August 12, 2025
US solar tracker manufacturer Nextracker will supply 1.5GW of its products to a Brazilian solar PV hybrid project portfolio.
August 12, 2025
The Government of Brunei Darussalam has broken ground on the 30MW solar PV power plant in Kampong Belimbing, the country’s largest solar facility to date.
August 12, 2025
US polysilicon company Highland Materials has signed a long-term lease for the site of a planned “next-generation” polysilicon production facility in Tennessee.
Premium
August 12, 2025
AFSIA CEO John van Zuylen told PV Tech Premium that solar power is the “ideal” technology type to improve electricity access in Africa.
August 12, 2025
The Government of Uganda has authorised EA Astrovolt to develop a 100MWp solar PV power plant, integrated with a 250MWh storage system.
August 12, 2025
The government of Indonesia has launched a programme that aims to build 100GW of solar PV in the coming years, mostly distributed across smaller projects in rural areas.

Subscribe to Newsletter

Upcoming Events

Solar Media Events
September 16, 2025
Athens, Greece
Solar Media Events
September 30, 2025
Seattle, USA
Solar Media Events
October 1, 2025
London, UK
Solar Media Events
October 2, 2025
London,UK
Solar Media Events
October 7, 2025
Manila, Philippines