Manz Automation’s OneStep selective emitter system boosts cell efficiencies 0.5%

September 6, 2010
Facebook
Twitter
LinkedIn
Reddit
Email

Product Briefing Outline: Manz Automation has developed the OneStep selective emitter (SE) system for crystalline silicon solar cells. Among competing SE processes, the laser process consists of only one single process step, without any consumable usage. Investment payback is said to be less than one year, while the small footprint allows easy retrofit of existing production lines. The tool is claimed to enable cell efficiency gains of up to 0.5%. 

Problem: One of the most prominent goals in the production of crystalline silicon solar cells is the reduction of the specific production cost per watt. One means of raising efficiencies is the incorporation of a selective emitter cell structure into industrial solar cell production, as it can increase solar cell efficiency due to enhanced blue light response, leading to higher short circuit current Jsc, and a reduced emitter saturation current density Joe, boosting the open circuit voltage Voc.

This article requires Premium SubscriptionBasic (FREE) Subscription

Try Premium for just $1

  • Full premium access for the first month at only $1
  • Converts to an annual rate after 30 days unless cancelled
  • Cancel anytime during the trial period

Premium Benefits

  • Expert industry analysis and interviews
  • Digital access to PV Tech Power journal
  • Exclusive event discounts

Or get the full Premium subscription right away

Or continue reading this article for free

Solution: The OneStep system features one single additional process step, when compared with standard crystalline silicon solar cell production. This step is introduced between emitter diffusion and phosphorous glass (PSG) etch. Pulsed laser irradiation locally scans the wafer surface, forming highly-doped areas by local liquid-state diffusion of phosphorous from the PSG layer. After anti-reflection coating, the metallization grid is deposited on top of the highly doped areas. The local doping leads to a reduction of the specific contact resistance from silicon to metal, thus allowing for the use of lowly doped emitters with high sheet resistance.

Applications: c-Si production applying n-type emitters and front-side metallization as well as existing lines (retrofit).

Platform: Throughput: 1200 or 2400 wafers per hour (configurable); accuracy: ±10µm.

Footprint (including automation): 4.7 x 2.7m2. Fully automated and compatible with all established carriers. Efficiency gain up to 0.5% absolute.

Availability: Currently available.

Read Next

December 5, 2025
BayWa r.e. has sold two of its UK solar farms, which have a combined capacity of 89.9MW, to global asset management firm Capital Dynamics
December 5, 2025
Origis Energy has raised US$265 million in finance from Advantage Capital to support the development of a 305MW solar PV portfolio in the US.
December 5, 2025
WBS Power has sold the 150MW solar, 500MW/2,000MWh BESS Project Jupiter in Brandenburg, Germany, to investor Prime Capital.
December 5, 2025
Over 140 US solar companies have urged Congress to reconsider changes to permitting which they say have resulted in “a nearly complete moratorium” on solar project permits.
Premium
December 5, 2025
In November, the Colorado PUC ordered utility Xcel Energy to provide higher-quality information, and introduce flexible tariffs.
December 4, 2025
High power prices and increased energy storage usage have led to a sharp increase in self-consumption of solar power in Germany since 2022, according to data from the Fraunhofer Institute for Solar Energy Systems (ISE).

Upcoming Events

Upcoming Webinars
December 17, 2025
2pm GMT / 3pm CET
Solar Media Events
February 3, 2026
London, UK
Solar Media Events
March 24, 2026
Dallas, Texas
Solar Media Events
April 15, 2026
Milan, Italy
Solar Media Events
June 16, 2026
Napa, USA