Manz Automation’s OneStep selective emitter system boosts cell efficiencies 0.5%

Facebook
Twitter
LinkedIn
Reddit
Email

Product Briefing Outline: Manz Automation has developed the OneStep selective emitter (SE) system for crystalline silicon solar cells. Among competing SE processes, the laser process consists of only one single process step, without any consumable usage. Investment payback is said to be less than one year, while the small footprint allows easy retrofit of existing production lines. The tool is claimed to enable cell efficiency gains of up to 0.5%. 

Problem: One of the most prominent goals in the production of crystalline silicon solar cells is the reduction of the specific production cost per watt. One means of raising efficiencies is the incorporation of a selective emitter cell structure into industrial solar cell production, as it can increase solar cell efficiency due to enhanced blue light response, leading to higher short circuit current Jsc, and a reduced emitter saturation current density Joe, boosting the open circuit voltage Voc.

This article requires Premium SubscriptionBasic (FREE) Subscription

Try Premium for just $1

  • Full premium access for the first month at only $1
  • Converts to an annual rate after 30 days unless cancelled
  • Cancel anytime during the trial period

Premium Benefits

  • Expert industry analysis and interviews
  • Digital access to PV Tech Power journal
  • Exclusive event discounts

Or get the full Premium subscription right away

Or continue reading this article for free

Solution: The OneStep system features one single additional process step, when compared with standard crystalline silicon solar cell production. This step is introduced between emitter diffusion and phosphorous glass (PSG) etch. Pulsed laser irradiation locally scans the wafer surface, forming highly-doped areas by local liquid-state diffusion of phosphorous from the PSG layer. After anti-reflection coating, the metallization grid is deposited on top of the highly doped areas. The local doping leads to a reduction of the specific contact resistance from silicon to metal, thus allowing for the use of lowly doped emitters with high sheet resistance.

Applications: c-Si production applying n-type emitters and front-side metallization as well as existing lines (retrofit).

Platform: Throughput: 1200 or 2400 wafers per hour (configurable); accuracy: ±10µm.

Footprint (including automation): 4.7 x 2.7m2. Fully automated and compatible with all established carriers. Efficiency gain up to 0.5% absolute.

Availability: Currently available.

Read Next

June 18, 2026
Renewable energy investment platform Chrysalis Renewables LP (Chrysalis) has acquired the Atlas V and Atlas VI solar projects in the US.
June 18, 2026
Oxford PV and Fraunhofer ISE have unveiled a module prototype that combines tandem perovskite-silicon and matrix shingle interconnection.
June 18, 2026
The Arizona Court of Appeals has vacated a decision that Arizona utilities can impose additional charges on residential solar customers.
Premium
June 18, 2026
In this interview with PV Tech Premium, Enervest CEO Ross Warby explains the demands of floating solar on a live water utility reservoir.
June 18, 2026
Developer Lightsource bp has reached financial close on the 171MWdc Glorit solar PV power plant, north of Auckland, New Zealand.
June 18, 2026
Australia's large-scale renewables pipeline has reached 32,277MW of probable generation capacity, according to the Clean Energy Regulator.

Upcoming Events

Media Partners, Solar Media Events
June 30, 2026
Sacramento, California
Media Partners, Solar Media Events
August 25, 2026
São Paulo, Brazil
Media Partners, Solar Media Events
September 1, 2026
Mexico City, Mexico
Solar Media Events
September 9, 2026
Schaumburg, Illinois
Media Partners, Solar Media Events
September 9, 2026