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Crystallization on dipped substrate wafer technology for crystalline silicon solar cells reduces wafer costs

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By H. Yamatsugu, Junior Manager, Solar Systems Group, SHARP Corporation; H. Mitsuyasu, Solar Systems Group, SHARP Corporation; T. Takakura, Solar Systems Group, SHARP Corporation; S. Goma, Solar Systems Group, SHARP Corporation; S. Kidoguchi, Solar Systems Group, SHARP Corporation; R. Oishi, Solar Systems Group, SHARP Corporation; Y. Okamoto, Solar Systems Group, SHARP Corporation; K. Yoshide, Solar Systems Group, SHARP Corporation; K. Yano, Solar Systems Group, SHARP Corporation; H. Taniguchi, Solar Systems Group, SHARP Corporation; M. Kamitaka, Production Technology Development Group, SHARP Corporation; C. Yamawaki, Production Technology Development Group, SHARP Corporation; M. Futagawa, Electronic Components and Devices Development Group, SHARP Corporation

A new wafer technology, named CDS (Crystallization on Dipped Substrate), is under development and has been found to be effective in the reduction of wafer cost and silicon feedstock. CDS technology was applied to 156mm x 156mm-sized wafers, obtained via the throughput of 1825cm2/min, and the resulting cell efficiency of 14.8% was confirmed. This paper outlines the principle behind the technology and outlines the procedure.

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The second edition of Photovoltaics International was published in November 2008. It includes the cost benefits of conversion of used 200mm semiconductor fabs for the PV industry by CH2M Hill in Fab & Facilities, in-line plasma-chemical etching from Fraunhofer IWS in Cell Processing and NREL presents design criteria for back- and front-sheet materials in PV Modules.

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