Progression of n-type base crystalline silicon solar cells


By L.J (Bart) Geerligs, Researcher, ECN Solar Energy; Nicolas Guillevin, Researcher, Device Architecture and Integration Group, ECN Solar Energy; Ingrid G. Romijn, Researcher, ECN Solar Energy

This paper reviews the status of solar cell technology based on n-type crystalline silicon wafers. It aims to explain the reasons behind the strong and increasing attention for n-type cells, including the inherent advantages of n-type base doping for high diffusion length, and for the industrialization of designs with good rear-side electronic and optical properties. The focus will be on cells using diffused junctions.

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The 12th Edition was published in May 2011. Highlights from this edition include Conergy’s in-depth study of MES in PV facilities; University of Konstanz heralds the return of UMG-Si; RWTH Aachen University details the gettering options available for selective emitters; TU Delft presents an overview of breakage issues for silicon wafers and cells; and the University of Toledo outlines the benefits of RTSE in polarized light metroscopy.

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