By Helge Haverkamp, Head of Solar Cell Process Technology Development, Schmid Group; Budi Tjahjono, CTO, Sunrise Global Solar Energy Co. Ltd.
The selective emitter (SE) concept features two different doping levels at the front surface of the cell. Both doping profiles are tailored individually to best suit their specific purposes, thus achieving both low contact resistance of the emitter electrode and low recombination in the emitter and at the Si/SiNx:H interface. This paper details the experience gained since the first tools for generating an SE structure were installed two years ago. The approach taken is discussed and a presentation given of the physical concept and properties of SE technology, along with the different aspects that have to be considered when integrating SE into an otherwise unchanged production facility.
