By Brett Hallam, Catherine Chan, David Payne, Dominik Lausch, Marcus Gläser, Malcolm Abbott & Stuart Wenham University of New South Wales (UNSW), Sydney, Australia; Fraunhofer Center for Silicon Photovoltaics (CSP), Halle (Saale), Germany
Light-induced degradation (LID) in both Czochralski (Cz) and multicrystalline p-type silicon is one of the biggest challenges currently faced by the PV industry. Over the next few years it will be necessary to develop
cost-effective solutions and integrate them into manufacturing lines. This is particularly important for the successful adoption of the passivated emitter rear cell (PERC), since this cell architecture has been shown to
be highly susceptible to degradation.