During the 35th IEEE PV specialist conference, Casey Kazmierowicz, chairman of the board at KIC, will present his paper, “Thermal Profiling of Silicon Solar Cells During the Metallization Process”. The paper will delve into a procedure using a thermal profiler and flattened TC junction thermocouples in a wafer fixture for accurate and repeatable measurements in an IR belt furnace.
A precise and repeatable recording of the thermal profile during the metallization process is important in the production of silicon solar cells with high physical and electrical properties. The established thermocouple and attachment procedures include a 0.02” sheath, spherical bead type K thermocouple cemented on the reference wafer and spring loaded on the wafer.
Try Premium for just $1
- Full premium access for the first month at only $1
- Converts to an annual rate after 30 days unless cancelled
- Cancel anytime during the trial period
Premium Benefits
- Expert industry analysis and interviews
- Digital access to PV Tech Power journal
- Exclusive event discounts
Or get the full Premium subscription right away
Or continue reading this article for free
In his paper, Kazmierowicz states that when using the SunKIC Datalogger and e-Clipse TC attachment fixture, the TC junction design can identify the aluminum melting temperature and alloy eutectic freezing temperature. This helps lead to the production of wafer that can be profiled and the surface temperature recorded at four locations.
