With the market's increasing demand for efficiency and quality, monocrystalline N-type cells have over recent years become a hot technology for the industrialization of high-efficiency cells, due to their high oligomeric life, low photoluminescence, good low light response and high temperature coefficient. Among conventional PERT and passivated contact TOPCon cells, the boron diffusion process has restricted the development and industrial application of N-type technology due to its complexity in preparation, high temperature and high equipment and maintenance costs.