Manz Automation’s OneStep selective emitter system boosts cell efficiencies 0.5%

Facebook
Twitter
LinkedIn
Reddit
Email

Product Briefing Outline: Manz Automation has developed the OneStep selective emitter (SE) system for crystalline silicon solar cells. Among competing SE processes, the laser process consists of only one single process step, without any consumable usage. Investment payback is said to be less than one year, while the small footprint allows easy retrofit of existing production lines. The tool is claimed to enable cell efficiency gains of up to 0.5%. 

Problem: One of the most prominent goals in the production of crystalline silicon solar cells is the reduction of the specific production cost per watt. One means of raising efficiencies is the incorporation of a selective emitter cell structure into industrial solar cell production, as it can increase solar cell efficiency due to enhanced blue light response, leading to higher short circuit current Jsc, and a reduced emitter saturation current density Joe, boosting the open circuit voltage Voc.

This article requires Premium SubscriptionBasic (FREE) Subscription

Unlock unlimited access for 12 whole months of distinctive global analysis

Photovoltaics International is now included.

  • Regular insight and analysis of the industry’s biggest developments
  • In-depth interviews with the industry’s leading figures
  • Unlimited digital access to the PV Tech Power journal catalogue
  • Unlimited digital access to the Photovoltaics International journal catalogue
  • Access to more than 1,000 technical papers
  • Discounts on Solar Media’s portfolio of events, in-person and virtual

Or continue reading this article for free

Solution: The OneStep system features one single additional process step, when compared with standard crystalline silicon solar cell production. This step is introduced between emitter diffusion and phosphorous glass (PSG) etch. Pulsed laser irradiation locally scans the wafer surface, forming highly-doped areas by local liquid-state diffusion of phosphorous from the PSG layer. After anti-reflection coating, the metallization grid is deposited on top of the highly doped areas. The local doping leads to a reduction of the specific contact resistance from silicon to metal, thus allowing for the use of lowly doped emitters with high sheet resistance.

Applications: c-Si production applying n-type emitters and front-side metallization as well as existing lines (retrofit).

Platform: Throughput: 1200 or 2400 wafers per hour (configurable); accuracy: ±10µm.

Footprint (including automation): 4.7 x 2.7m2. Fully automated and compatible with all established carriers. Efficiency gain up to 0.5% absolute.

Availability: Currently available.

Read Next

July 4, 2025
Chinese PV provider Skycorp Solar Group has announced a solar plant acquisition and development strategy following unanimous board approval.
July 4, 2025
Germany’s latest innovation tender has awarded 488MW of co-located capacity, with all the projects being solar PV tied with energy storage.
July 4, 2025
Risen Energy’s mass-produced heterojunction (HJT) modules have reached a cell conversion efficiency of 26.61%, a record figure for the company.
July 4, 2025
The US House of Representatives has passed the final version of the reconciliation bill that is now going to US President Donald Trump’s desk for his signature before its passing.
July 4, 2025
Australian retailer AGL Energy has confirmed its acquisition of South Australia’s Virtual Power Plant (SAVPP) from Tesla.
July 3, 2025
Renewable energy curtailment in Brazil is set to reach 8% across the country, and be as high as 11% in the north-east, by 2035.

Subscribe to Newsletter

Upcoming Events

Media Partners, Solar Media Events
September 2, 2025
Mexico City, Mexico
Solar Media Events
September 16, 2025
Athens, Greece
Solar Media Events
September 22, 2025
Bilbao, Spain
Solar Media Events
September 30, 2025
Seattle, USA
Solar Media Events
October 1, 2025
London, UK