Photovoltaics International Papers

This paper presents the main features of imec’s n-PERT (passivated emitter rear totally diffused) cells, which have achieved independently confirmed efficiencies of 22%. A special focus is given to the selective front-surface field formation by laser doping, which – combined with imec’s front-plating sequence and the excellent rear-surface passivation by Al2O3 on the boron-diffused emitters – has enabled very high voltages (close to 685mV) to be realized on large-area n-type Cz material.

This paper reports on the status of large-area, 156mm, bifacial, n-type passivated emitter and rear totally diffused (n-PERT) solar cells, which feature full-area homogeneous doped regions on the front and rear sides. The fabrication process includes either two separate gas-phase diffusion processes with sacrificial diffusion barrier layers, or a sophisticated co-diffusion approach, in which a deposited stack of borosilicate glass (BSG) and silicon oxide acts as a dopant source during back-surface field (BSF) formation in a tube furnace. Thus, the co-diffusion approach reduces the number of required high-temperature processes to one, which significantly streamlines the process sequence. It is shown that by implementing two deposition phases during the BSF diffusion process, it is possible to separately control both the depth and the surface concentration of the BSF. The use of a tailored BSG source allows low recombination and specific contact resistance values on both the front and rear sides, resulting in peak conversion efficiencies of 19.9%. A discussion on the recombination at the emitter -metal interface completes the paper, and several paths to driving the conversion efficiency towards 22% are outlined.

Modules based on p-type multi c-Si technologies look set to dominate the PV industry over the next five years, continuing a trend that has developed over the past two years. This paper explores why high-efficiency p-type multi seems destined to remain the workhorse of the global PV industry.

In anticipation of the expected increase in the use of back-contact cells in future PV modules, a number of different concepts have been proposed. This paper focuses on one approach that aims to stay close to conventional solder-based technology (tabbing - stringing) while still allowing the use of back-contact cells (which have more complex back-side metallization schemes). The advantages and disadvantages of such an approach are discussed, and the development of this technology is described in terms of process flow, materials, characterization and reliability.

With lower returns on investment in PV projects, financial institutions have an ever-increasing demand for risk mitigation. Project stakeholders are asked to provide evidence of risk-management actions and have to look for ways to guarantee an adequate level of quality for their systems. Product certification, although necessary to help qualify the design of a product, does not provide a guarantee that mass production will achieve the targeted quality level; it has therefore become necessary to find reliable methods to assess the quality of PV systems on a large scale. Production monitoring, as part of a global quality plan for a PV system, is a cost-effective way to implement real-time checks in the manufacturing facilities, providing reassurance for stakeholders and helping manufacturers to improve their manufacturing processes. This paper details the principles behind production monitoring, the methodology used and how to deploy a production-monitoring project.

With the objectives of reducing cell-to-module losses, improving module efficiency and reducing the price per watt, increasing importance is being placed on the optical properties of backsheets. It is assumed that a higher reflectance backsheet allows a better reuse of incident sunlight. However, this statement is not always true: another factor must be taken in account, namely the angular dependence of the reflected light. In this regard, backsheets with a high specular component deviate from the ideal Lambertian reflectance, resulting in a minor increase in module current. As a result, differences can be found in module power because of the use of backsheets with similar global reflectance but different angular components of reflected light. A total of 33 industrial backsheets with Tedlar, Kynar, EVA and PET layers from different suppliers were analysed. A comparison of backsheets with low and high global reflectances revealed that the power variation in a standard PV module reaches 0.54% abs. In the same vein, and for backsheets with similar global reflectances, it was experimentally found that the angular response of the reflected light was responsible for a power difference of 0.22% abs. in a standard module.

During the past two years remarkable performance improvements have been reported for polycrystalline Cu(In,Ga)Se2 (CIGS), CdTe and perovskite thin-film solar cells. In this paper the key breakthroughs in CIGS thin-film technology are reviewed and the scope for further performance improvements by analysing the stillremaining electrical and optical losses in record-efficiency CIGS solar cells is discussed. On the basis of this analysis it is believed that conversion efficiencies up to 25% are achievable with CIGS solar cells in the mid term. Furthermore, the potential for the concept of polycrystalline multi-junction solar cells to push efficiencies even further, towards 30%, is discussed. Finally, a short review of the CIGS market and an outlook from an industrial perspective are presented.

A recent revitalization of the passivated emitter and rear cell (PERC) concept in the silicon PV industry has resulted in solar energy conversion efficiencies of greater than 20% being achieved on p-type solargrade single-crystalline silicon (mono-Si) wafers during the past two years or so, thanks to technological advance in the use of aluminium oxide for silicon surface passivation. The research efforts carried out at JA Solar in developing an industry version of PERC cells that can be mass produced utilizing the existing conventional back-surface field (BSF) cell manufacturing platform with moderate retrofitting have yielded 20.5% average conversion efficiency, which can be consistently achieved on p-type Si wafers grown by the Czochralski method. Moreover, the experimental results showed that an average conversion efficiency of 20% is achievable when, in combination with JA Solar’s proprietary light-trapping technique, the same technological approach is applied to the cells using high-quality polycrystalline silicon (multi-Si) wafers produced by the seeded directional solidification method.

In this paper large-area (239cm2) n-type passivated emitter, rear totally diffused (n-PERT) solar cells are compared with state-of-the-art p-type passivated emitter and rear cells (p-PERC) to evaluate potential advantages of n-PERT over p-PERC. In particular, an investigation has been carried out of fully screenprinted bifacial n-PERT solar cells, in which the boron-doped emitter is contacted with aluminiumcontaining silver (AgAl) pastes, as well as of n-PERT back-junction (BJ) solar cells, in which the B-doped emitter is locally contacted with screen-printed Al. Using two separate quartz furnace diffusions for the B- and P-doped regions, efficiencies of up to 20.3% on bifacial n-PERT solar cells and of up to 20.5% on n-PERT BJ solar cells were achieved. In comparison, reference p-PERC solar cells that were processed in parallel achieved efficiencies of up to 20.6% before light-induced degradation (LID), but degraded to 20.1% after 48 hours of illumination. In addition, ion implantation and pre-deposition of dopant sources have been evaluated as alternative technologies for forming the full-area doping of the front and rear wafer surfaces, thus reducing the number of processing steps for n-PERT solar cells. Using ion implantation and a co-annealing step, efficiencies of up to 20.6% for bifacial n-PERT solar cells have been achieved, and of up to 20.5% for n-PERT solar cells, in which the P-doped back-surface field is contacted with evaporated Al. By employing a boron silicate glass (BSG) deposited via plasma-enhanced chemical vapour deposition (PECVD) as a dopant source, along with a co-diffusion step, n-PERT BJ solar cells have been fabricated with up to 19.8% energy conversion efficiency.

The aim of this paper is to dispel the common belief that bifaciality is nonsense as it is not a mature technology, it is expensive and, because in large systems there is limited albedo from the rear side, it only serves the niche market. A complete picture of bifacial cell technologies and module concepts is presented, as well as levelized cost of electricity (LCOE) results for present and future bifacial systems.