Leading ‘Solar Module Super League’ (SMSL) member, JinkoSolar has partnered with the Shanghai Institute of Space Power-Sources (SISP) to co-develop high-efficiency multi-junction solar cell technology for both space and terrestrial applications.
JinkoSolar said this was an early stage R&D partnership that would be based on silicon wafers instead of Gallium Arsenide (GaAs) wafers, typically used for space applications, due to radiation.
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However, JinkoSolar noted that it would be supporting the development of a silicon based substrate and bottom silicon cell, indicating SISP would be developing a tandem and or multi-junction top cells.
Triple-junction solar cells used for space applications can consist of indium gallium phosphide (InGaP), indium gallium arsenide (InGaAs) and germanium layers, fabricated using metal-organic vapour deposition (MOCVD) with conversion efficiencies of over 37%, while single-junction GaAs solar cells have achieved over 28% conversion efficiencies.
Dr. Jin Hao, Vice President of JinkoSolar said, “The strategic cooperation with Shanghai Institute of Space Power-Sources has a great importance. In the future, we will continue to increase technical cooperation, leading our industry in the name of technical innovation and providing more efficient solar panels with a wider range of choices for global customers.”
A low-cost alternative to GaAs wafer-based multi-junction solar cells has often been touted as a future path for the silicon solar manufacturing industry.