gallium arsenide

January 7, 2019
PV research institute Fraunhofer ISE has reported a new efficiency record of 22.3% for a multi-junction solar cell made of silicon and III-V semiconductor materials using a direct epitaxy process developed with tool supplier AIXTRON.
December 13, 2018
Specialist gallium arsenide (GaAs) PV manufacturer Alta Devices, a subsidiary of Hanergy Group, has achieved another new solar cell conversion efficiency record of 29.1%, which was certified by Fraunhofer ISE CalLab.
July 4, 2018
The US Naval Research Laboratory selected Alta Devices, as the solar solution for the prototype Hybrid Tiger UAV, Edgar A. Gunter explores the results and the implications for the thin-film market.
July 3, 2018
Specialist gallium arsenide (GaAs) PV manufacturer Alta Devices, a subsidiary of Hanergy Group has achieved a new solar cell conversion efficiency record of 28.9%, which was certified by NREL (National Renewable Energy Laboratory).
May 31, 2018
Move over pesky perovskites and old faithful intrinsic amorphous silicon as the preferred solutions for tandem-junction solar cell post crystalline-silicon PERC (passivated emitter rear cell) technology: A perennial conversion efficiency record holder and space-proven solution is back to gate-crash the party.
August 23, 2017
Automotive giant Audi AG and thin-film solar manufacturer Hanergy, via its US-based subsidiary Alta Devices have signed an MOU in respect of a development agreement to provide its electric vehicles with gallium arsenide (GaAs) flexible thin film based solar system integrated into a range of planned electric vehicles.
July 6, 2017
Sweden-based solar cell nanowire materials start-up Sol Voltaics has secured US$21.3 million in a new funding round just a month after claiming a key breakthrough in commercializing its gallium arsenide (GaAs) nanowire film for crystalline silicon solar cells.
May 24, 2017
Sweden-based solar cell nanowire materials start-up Sol Voltaics said it had achieved a key breakthrough in commercializing its gallium arsenide (GaAs) nanowire film for crystalline silicon solar cells.
May 26, 2016
A triple-junction compound solar module with a conversion efficiency of 31.17% has been created by a project involving Japan’s New Energy and Industrial Technology Development Organization (NEDO) and Sharp.

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