PV research institute Fraunhofer ISE has reported a new efficiency record of 22.3% for a multi-junction solar cell made of silicon and III-V semiconductor materials using a direct epitaxy process developed with tool supplier AIXTRON.
Specialist gallium arsenide (GaAs) PV manufacturer Alta Devices, a subsidiary of Hanergy Group, has achieved another new solar cell conversion efficiency record of 29.1%, which was certified by Fraunhofer ISE CalLab.
Specialist gallium arsenide (GaAs) PV manufacturer Alta Devices, a subsidiary of Hanergy Group has achieved a new solar cell conversion efficiency record of 28.9%, which was certified by NREL (National Renewable Energy Laboratory).
Move over pesky perovskites and old faithful intrinsic amorphous silicon as the preferred solutions for tandem-junction solar cell post crystalline-silicon PERC (passivated emitter rear cell) technology: A perennial conversion efficiency record holder and space-proven solution is back to gate-crash the party.
Automotive giant Audi AG and thin-film solar manufacturer Hanergy, via its US-based subsidiary Alta Devices have signed an MOU in respect of a development agreement to provide its electric vehicles with gallium arsenide (GaAs) flexible thin film based solar system integrated into a range of planned electric vehicles.
Sweden-based solar cell nanowire materials start-up Sol Voltaics has secured US$21.3 million in a new funding round just a month after claiming a key breakthrough in commercializing its gallium arsenide (GaAs) nanowire film for crystalline silicon solar cells.
Sweden-based solar cell nanowire materials start-up Sol Voltaics said it had achieved a key breakthrough in commercializing its gallium arsenide (GaAs) nanowire film for crystalline silicon solar cells.
A triple-junction compound solar module with a conversion efficiency of 31.17% has been created by a project involving Japan’s New Energy and Industrial Technology Development Organization (NEDO) and Sharp.